Papers:
A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation
We present analytical electron mobility formulae for Si which treat the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte Carlo (MC) [...]
PSDesigner: A Framework for Transistor Co-Optimization
One challenge for modern CMOS technology is the manufacture of dissimilar transistors on a sin~le chip at minimum cost. For example, hioh performance transistors for critical paths and low power transistors can be combined to [...]
Residual Stresses/Strains Analysis of MEMS
This paper describes the development of a finite element based MEMPACK code developed by the lead author and his graduate students. The MEMPACK code will be used for simulation and prediction of residual stresses and [...]
A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs Modules
Insulated Gate Bipolar Transistors (IGBT's) are widely used in the automotive industry as high power current switches. They are currently being introduced into traction applications (locomotives, trams, metros, etc.) where high reliability is extremely important. [...]
Modeling of Strain in Boron-Doped Silicon Cantilevers
A finite element method is developed to compute the mechanical strain resulting from boron doping in silicon. This technique is then applied to the bending of borondoped silicon cantilevers. The silicon cantilever is modeled as [...]
Adaptive Hierarchical Finite Element Modeling of Dopant Diffusion
We present a finite element formulation based on a hóp refinement strategy for the coupled dopant-defect diffusion problem in semiconductor process modeling. The algorithm involves increasing the degree p of the element basis as well [...]
3-D Electrothermal Model of Multifinger, High-Power HBTs
We present a 3-D electrothermal model based on the finite difference method and applied to GaAs heterojunction bipolar transistors (HBTs). This non-linear model compmes the temperature distribution under static bias conditions for multifinger HBTs, although [...]
Fault Model Generation for MEMS
Most MEMS applications demand extraordinary levels of product reliability. This results in the need to design a comprehensive testing methodology for MEMS. Effectiveness of any testing methodology depends on the accuracy of fault models utilized. [...]
A Floating Random-Walk Method for Efficient RC Extraction of Complex IC-Interconnect Structures
The floating random-walk method has been used to efficiently extract interconnect capacitance in complex, multilevel integrated circuits. We present here an overview of the floating random-walk method in the context of capacitance extraction. The method [...]
Yield Prediction Under Non-Standard Data Distributions
Rao S., Saxena S., Apte P., Mozumder P.K., Davis J., Burch R., Vasanth K., Texas Instruments, Inc., US
The trend towards smaller feature sizes has increased the need to accurately characterize the distribution of process and device responses to predict and improve yield [1]. The usual approach to characterization assumes that the response [...]
Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment
In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of [...]
Reliability Issues in Microelectromechanical Systems
The interdisciplinary field of micro-electro-mechanical systems (MEMS) has emerged as a dominant field with potential for the development of commercially viable products such as sensors and actuators, automotive and aerospace electronics, computer peripherals, communication devices, [...]
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Industry sector: Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation, Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3