Puchner H.
Cypress Semiconductor, US
Keywords: feature-scale, high-k, kinetic Monte Carlo, nitridation, plasma, reactor-scale
Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory calculations used to investigate the scaling trends of high-k gate dielectrics. Since conventional as well as high-k dielectrics may still require a strong diffusion barrier against boron penetration we will present ab-initio quantum chemical calculations for the diffusion of boron within a thin gate oxide layer. Plasma-nitridation can be applied to alter the diffusion behavior of boron inside the gate oxide dielectric and to completely block boron penetration. We will present a detailed view on the nitridation mechanism and a combination of reactor-feature scale simulation in combination with Monte Carlo implantation simulations to describe the nitridatio process. Finally, kinetic Monte Carlo applications are presented for diffusion processes.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 458 - 461
Industry sector: Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 0-9708275-7-1