Authors: M. Mastrapasqua, D. Esseni and C. Fiegna
Affilation: Agere Systems, United States
Pages: 734 - 737
Keywords: SOI, mobility, ultra-thin SOI, fully depleted, quantization
We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm using a special test structure able to circumvent parasitic resistance effects. At small inversion density, Ning, the mobility is clearly reduced for decreasing Tsi, due to enhanced phonon scattering in the thin quantum well. However, for double gate operation, DB, we found an improvement in the effective mobility when compared with single gate, SG, operation.