Authors: M. Bucher, C. Enz, F. Krummenacher, J.M. Sallese, C. Lallement, A.S. Porret
Affilation: National Technical University of Athens, Greece
Pages: 670 - 673
Keywords: EKV 3.0 compact MOS transistor model, deep-submicron aspects
The EKV 3.0 compact MOS transistor model for advanced IC design is presented. Its basis is an ideal analytical charge-based model including static to non-quasistatic dynamic aspects and noise. The ideal model is extended to account for the major second-order effects in deep-submicron CMOS technologies resulting from technology scaling and from short-channel effects. It is shown how these nonidealities affect the ideal device characteristics. The increasingly important moderate and weak inversion operation are emphasized. The hierarchical structure of the model is presented, essential features and effects are outlined and illustrated with respect to device characteristics in deepsubmicron CMOS.