A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y.
Nanyang Technological University, SG

Keywords: deep-submicron MOSFET devices, velocity-overshoot subthreshold current model

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 396 - 399
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0