MSM 2000

Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems

Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions

J. Furlan and Z. Gorup

*University of Ljubljana, SI*

Optimization of FIBMOSs through 2-D Device Simulations

J. Kang, D.K. Schroder and D.P. Pivin

*Arizona State University, US*

Modelling of the "Gated-Diode" Configuration in Bulk MOSFET's

A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling

*TECH Semiconductor, SG*

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model

S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen

*University of Bremen, DE*

Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement

C.Y.T. Chiang, Y.T. Yeow and R. Ghodsi

*University of Queensland, AU*

Study of Voltage Tunable Asymmetric Quantum Well Structure for Infrared Detection

P.R. Vaya, S. Ananda Natarajan and K.R. Srinivasan

*Indian Institute of Technology, IN*

Modelling Multilayer Semiconductor Structures

K. Brecl and J. Furlan

*University of Ljubljana, SI*

Study of Well Barrier Hole Burning in Quantum Well Bistable Lasers

M. Ganesh Madhan, P.R. Vaya and N. Gunasekaran

*Anna University, IN*

Equation of p-n Junction for High Current Density Models of Transistor

A. Baskys

*Semiconductor Physics Institute, LT*

The 2.4F2 Memory Cell Technology with Stacked-Surrounding Gate Transistor (S-SGT) DRAM

M. Suzuki, T. Endoh, H. Sakuraba and F. Masuoka

*Tohoku University, JP*

Inverse Modeling for C-V Profiling of Modulated-Doped Semiconductor Structures

M.F. Kokorev, N.A. Maleev and D.V. Pakhnin

*State Electrotechnical University, RU*

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

W. Qian, X. Zhou, Y. Wang and K.Y. Lim

*Nanyang Technological University, SG*

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables

J. Harris and D. Vasileska

*Arizona State University, US*

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

C. Ravariu, A. Rusu, D. Dobrescu, L. Dobrescu, F. Ravariu, C. Codreanu and M. Avram

*University of Bucharest, RO*

Modelling of Atmosphere Sensitive Heterojunctions for Device Applications

G. Mangamma and T. Gnanasekaran

*Indira Gandhi Centre For Atomic Research, IN*

Squeezed Electrons in GaN Quantum Wells

B.K. Ridley, N.A. Zakhleniuk and C.R. Bennett

*University of Essex, UK*

ISBN: 0-9666135-7-0

Pages: 741

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