Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology

Atomic and Nanoscale Modeling Chapter 5

Effect of Stress on Dopant Diffusion in Si
M.S. Daw, W. Windl and M. Laudon
Clemson University, US

Atomistic Modeling of Arsenic Diffusion and Activation
S. Dunham, P. Fastenko, Z. Qin and G. Henkelman
University of Washington, US

Theoretical Investigations of Diffusion and Clustering in Semiconductors
B.P. Uberuaga, G. Henkelman, H. Jonsson, S.T. Dunham and W. Windl
Los Alamos National Lab, US

Boron Diffusion and Activation in Silicon in the Presence of Other Species
H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee
Univ. of Texas Austin, US

Ab Initio Modeling of Boron Clustering in Silicon
W. Windl, X-Y. Liu and M.P. Masquelier
Motorola, US

Thermodynamic Processes of Si-interstitial Clusters
J. Kim, S. Birner, D.A. Richie, J.W. Wilkins, A.F. Voter
Ohio State University, US

ISBN: 0-9708275-3-9
Pages: 218