2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

The static behavior of RF MEMS capacitive switches in contact

H.M.R. Suy, R.W. Herfst, P.G. Steeneken, J. Stulemeijer and J.A. Bielen
NXP Semiconductors Research, NL

RF MEMS, capacitive switch, contact, model

A method is presented in which surface topography characterization is combined with the electrical measurement of the contact mechanics under electrostatic loading. Contact characteristics such as the surface separation versus the applied pressure, and the applied pressure versus the contact area, are derived. Based on these results, a contact model is validated. In combination with a compact model of a capacitive switch, this contact model is used to predict the contact behavior of different switch designs

Nanotech 2008 Conference Program Abstract