2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina
Global TCAD Solutions, AT

MOSFETs, TCAD, Numerical device simulation

An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented.

Nanotech 2008 Conference Program Abstract