2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

Silicon on ceramics - a new concept for micro-nano-integration on wafer level

M. Fischer, H. Bartsch de Torres, B. Pawlowski, M. Mach, R. Gade, S. Barth, M. Hoffmann, J. Müller
Technische Universität Ilmenau, DE

silicon on ceramic, black silicon, bonding of silicon to ceramics, wafer level packaging

A new integration concept for silicon devices to ceramic substrates based on a new bonding technique between nano-scaled, modified Black Silicon and an adapted, unfired LTCC substrate is presented. The novel technique enables to combine advantages of silicon and ceramic technology, especially electrical and fluidic interconnects from nm- to mm-scale. Current bonding concepts of silicon on ceramics need joining materials like solders, adhesives or glass frits. Alternatively, silicon components can be mounted to a TCE-matched and fired LTCC by anodic bonding, which requires costly surface preparation by polishing. This step is eliminated by the use of the new technique. During a standard lamination process, a self-organized, nano-structured silicon surface is joined with the green ceramic body. Pressure assisted sintering allows the co-firing of the composite. Dense contact between the Black Silicon surface and the ceramic, leading to a maximum average bonding strengths of 1775 N/cm, is achieved by optimization of the nano-interface and the lamination procedure. First leak-tightness measurements show leak rates up to 1.9 10-8 mbar l/s. Electrical interconnects between ceramic body and silicon have been realised by means of metalized BSi penetrating into LTCC conductors The new integration concept has been demonstrated by a fluidic chip cooling system.

Nanotech 2008 Conference Program Abstract