2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Electroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes

X. Wang, J.J. Cole and H.O. Jacobs
University of Minnesota, US

nanowire, ZnO, heterojunction, light emitting diode, device

ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) were fabricated by growing ZnO nanowire vertical arrays in aqueous solution on Mg-doped p-GaN films. Diode-like, rectifying I-V characteristics were recorded at room temperature and a “current crowding” effect was observed due to the high sheet resistance of the GaN film. The majority of voltage drop was found to occur during current transport in the GaN film. Light emission centered at 390 nm and 585 nm was observed under forward bias while a broad emission centered at 520 nm was found under reverse bias. Two emission mechanisms have been explored: space charge limited current in the forward bias and tunneling in the reverse bias.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.