2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Theory of source-drain partitioning in MOSFET

A.S. Roy, C.C. Enz and J.M Sallese

MOSFET, charge patitioning

The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high frequency advanced compact models for MOSFET devices. Recently it has been shown that WD partitioning fails for field dependent mobility or for laterally asymmetrical doping. This work is aimed at presenting a generalization of the partitioning concept.

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Nanotech 2007 Conference Program Abstract


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