2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Explicit Short Channel Compact Model of Independent Double Gate Mosfet

M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah

IDG MOSFET, explicit compact model, Short Channel Effects

This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in circuit simulator in VerilogA language to design digital and analog circuits using the independent gate structures.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.