2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Q. Chen, S. Suryagandh, J-S Goo, J.X. An, C. Thuruthiyil and A.B. Icel
Advanced Micro Devices, US

body current, compact modeling, GIDL, hysteresis, impact ionization, PD SOI

The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD SOI technologies indicate that both components dominate in the body currents at zero gate voltage and non-zero drain voltage. Body currents under these particular conditions are critical to pre-first-switch body voltage establishment, which is definitively validated by a compact modeling experiment. As the OFF-state channel leakage current increases in scaled technologies, these body currents need to be closely monitored and well modeled to properly predict and understand evolution of the hysteresis behavior.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.