2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Nanoscale Modeling of Damage and Annealing of SiC Diode Detectors under Irradiation

B. Khorsandi, W. Windl, T.E. Blue, J. Chenkovich and D. Miller
Ohio State University, US

Nanoscale modeling, SiC, radiation damage

In this paper, we discuss a computer simulation method to study the long-time accumulation of nanoscale damage for SiC detectors placed in a thermal neutron environment at 500 K. Combining Monte Carlo (MC) and binary collision approximation (BCA) simulations, we calculate the number of point defects per atom (PDPA) for SiC detectors after a reactor refueling cycle (which is the minimum time where it is possible to change the SiC detectors, if necessary). Then, using ab-initio and kinetic Monte Carlo (KMC) codes, the effect of temperature on the damage recovery is studied. In a further step, we will define the SiC failure, based on the PDPA. Also, we will examine the possibility to computationally design from the bottom up device and contact materials with improved radiation hardness and manufacturability.

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