2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Nanoscale Physics for Compact Models

M. Lundstrom and H. Pal
Purdue University, US

MOSFET, physics, nanoscale, ballistic

MOSFET channel lengths are well below 100nm, and getting smaller. Device scaling has been the foundation for the continued success of silicon electronics, but compact models, the link between technology and designed, have also played a critical role. The approach to physics-based compact models has evolved from seminal work in the 1960’s, but is still based on concepts that lose validity at the nanoscale. In spite of this, compact models continue to work remarkably well. Our objectives in this talk are to: 1) present a simple, physical view of the nanoscale MOSFET, 2) identify the new physics that becomes prominent at the nanoscale, 3) explain why traditional models continue to work well at the nanoscale, and 4) explore approaches for a nanoscale-physics based compact model, and 5) explain why such a model would be useful.

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