2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

M. Chan and W. Wu

parasitics, FinFETs

The geometry-dependent parasitic components in multi-fin FinFETs are studied. The gate-resistance has a stronger dependent on the device geometry compared with the planar MOSFETs. Parasitic fringing capacitance and overlap capacitance become highly coupled to the gate geometry. In this work, we analyse the gate resistance using a distributed RC approach and study the gate capacitance using a conformal mapping approach. A physical model that account for the gate resistance and parasitic capacitive couplings between Source/Drain and gates is presented.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.