2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Non-standard geometry scaling effects

M. Schröter and S. Lehmann
Technische Universität Dresden, DE

non-standard, geometry scaling, compact model, physics-based

The impact of process and geometry effects on important electrical parameters of SiGe HBTs as a function of emitter width is investigated and explained using device and circuit simulations. The goal is to provide a guideline for identifying such effects, especially those causing non-standard geometry scaling, in order to be able to include them in the parameter extraction for geometry scalable physics-based compact models. Simple extensions of the standard scaling law are suggested, which are suitable for compact modeling. Experimental results exhibting some of the effects will be shown as demonstration.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors Keywords

Nanotech 2007 Conference Program Abstract


Names, and logos of other organizations are the property of those organizations and not of NSTI.
This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.