2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual

Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts

B.B. Jie and C-T Sah
Peking University, CN

MOS transistor, double integral drain current y-equation, surface-potential gate-voltage x-equation, flat-band current, remote contact types and lengths

Analytical solutions and computed characteristics for long-wide-channel thick-base MOS transistors are reported. The second generation industrial-consensus surface potential approach is used. Decomposition of the 2-Dimensional transistor problem into two 1-D problems follows the 1966-Pao-Sah current- or Y-equation and the 1965-Sah-Pao voltage- or X-equation as modified by 2002-Gildenblatt-McAndrew-Victory and 2004-Sah-Jie to correct the physical-unreality imaginary electric field at flatband. The effects of the remote body boundary condition and contact type on drain-current vs gate-voltage characteristics are described, including the two asymptotic contact types (short-circuit and open-circuit) and geometry, as well as the two ancient approximations to avoid the divergent bipolar-transistor-like minority-carrier currents at MOS flatband.

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