Dijon J., Ramos R., Fournier A., Fournier H., Le Poche H., Fournier A., Fournier H., Okuno H., Simonato J-P
CEA-Liten, FR
Keywords: carbon nanotubes, doping, horizontal interconnects
Carbon in the form of nanotubes (CNTs) and graphene is the only known material that can replace copper in integrated circuits to carry the high current densities associated with advanced interconnects. Its implementation is however currently plagued by integration issues and poor electrical performances (both CNT resistivity and carbon/metal contact). Even though high CNT area density can be achieved in vias, the gain from using CNTs instead of Cu is larger for the longer horizontal interconnects. However, only few reports exist on the integration of CNTs in such interconnects. We have demonstrated an integration scheme for the in-situ growth and contacting of horizontal CNT lines with lengths up to 20 µm and diameters down to 50 nm. Here we report for the first time the iodine doping of CNT interconnects resulting in the lowest resistivity reported for horizontal CNT interconnects with 450 µΩ.cm, i.e. comparable to the best CNT vias. The doping is stable on a three-month time scale (i.e. unchanged resistivity) up to 200°C and can withstand high current densities >5.107 A/cm2
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2014: Electronics, Manufacturing, Environment, Energy & Water
Published: June 15, 2014
Pages: 17 - 20
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Printed & Flexible Electronics
ISBN: 978-1-4822-5830-1