Nano Science and Technology Institute
Nanotech 2014 Vol. 3
Nanotech 2014 Vol. 3
Nanotechnology 2014: Electronics, Manufacturing, Environment, Energy & Water

Chapter 1:

Nano, Organic, Flexible & Printed Electronics

-Heterogeneous Nano-electronic Devices Enabled by Monolithic Integration of IIIV, Ge, and Si to expand future CMOS functionality
 A.V-Y. Thean, N. Collaert, N. Waldron, C. Merckling, L. Witters, R. Loo, J. Mitard, R. Rooyackers, A. Vandooren, A. Verhulst, A. Veloso, A. Pourghaderi, G. Eneman, D. Yakimets, T. Huynh Bao, M. Garcia Bardon, J. Ryckaert, M. Dehan, P. Wambacq, M. Caymax
-Random Dopant Fluctuation in 10-nm-Gate Multi-Channel Gate-All-Around Nanowire Field Effect Transistors
 H-T Chang, Y. Li
 National Chiao Tung University, TW
-Silver Nanoplate Array for Vertically Aligned P-type ZnO Nanorods
 J.-H. Park, T.I. Lee, J.-M. Myoung
 Yonsei University, KR
-Ultra-Low Power Node for Body Sensor Network
 E. Yahya, Y. Ismail, M. Ismail
 American University in Cairo/ Zewail City of Science and Technology, EG
-Record resistivity for in-situ grown horizontal carbon nanotubes interconnects
 J. Dijon, R. Ramos, A. Fournier, H. Le Poche, H. Fournier, H. Okuno, J.P. Simonato
 CEA, Liten, FR
-Semiconducting Bilayer Graphene for Device Applications
 T. Chu, Y. Zhao, Z. Chen
 Purdue University, US
-Information-Theoretic Estimates of Classical and Quantum Communication and Processing at Nanoscale
 S.E. Lyshevski, L. Reznik
 Rochester Institute of Technology, US
-tunneling rate in chaotic quantum system
 I. Filikhin, S.G. Matinyan, B. Vlahovic
 North carolina Central University, US
-Unipolar resistive switching and current flow mechanism in thin film SnO2
 A. Talukdar, S. Almeida, J. Mireles, E. MacDonald, J.H. Pierluissi, E. Garcia, D. Zubia
 University of Texas at El Paso, US
-Temperature Stability of PAG-Doped-Graphene, Towards Commercial Production of Graphene Integrated Circuits
 H. Al-Mumen and W. Li
 Michigan State University, US
-Direct Integration of Ni2Si/Si Nanograss Heterojunction Array on the Gate Terminal of N-MOSFET Utilizing a CMOS Compatible Top-Down Technique
 H. Taghinejad, M. Ganji, A. Rostamian, M. Taghinejad, M. Abdolahd, S. Mohajerzadeh, H. Tghinejad
 university of tehran, IR
-Enhanced performance of all organic field-effect transistors and capacitors through choice of solvent
 S. Guha, G. Knotts, N.B. Ukah
 University of Missouri, US
-Production technologies for large area flexible electronics
 T. Kolbusch, K. Crone
 Coatema Coating Machinery GmbH, DE
-Effect of Porosity on Specific Resistance of Inkjet-Printed Silver Nanoparticles during Laser Sintering
 Y.J. Moon, H. Kang, K. Kang, S.H. Lee, J.Y. Hwang, S.J. Moon
 Korea Institue of Industrial Technology, KR
-A method to produce microelectronic devices on textile and paper substrates
 I.G. Trindade, R. Miguel, J. Lucas, M. Pereira, M. Santos Silva
 Universidade da Beira Interior, PT
-High Performance Organic Transistors based on Molecular Doping
 B. Lussem, M. Tietze, H. Kleemann, A. Fischer, A. Gunther, K. Leo
 Kent State University, US
-Fully Integrated Embroidery Process for Smart Textiles
 I.G. Trindade, P. Spranger, F. Martins, R. Miguel, M. Pereira, M. Santos Silva
 Universidade da Beira Interior, PT
-Stretchable Electronics
 J. Liang, L. Li, J. Hajagos, X. Niu, Z. Yu, Q. Pei
 University of California, Los Angeles, US
-Printed Gas Sensors for the Trillion Sensor Universe
 J.R. Stetter, E.F. Stetter, M. Findlay, V. Patel
 KWJ Engineering Inc. & SPEC Sensors LLC, US
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