Authors: H. Hussin, N. Soin, M.F. Bukhori
Affilation: Universiti Teknologi MARA, Malaysia
Pages: 463 - 466
Keywords: NBTI, interface trap, switching oxide trap, p-MOSFET, high-k dielectric
We investigate the subthreshold operation effects on NBTI reliability issues in the framework of two-stage NBTI model. This is to include the effect of oxide trap since most previous simulation-based study only focuses on interface trap which rely on the R-D model. The electrical characteristics in terms of threshold voltage shift and positively charged E’center defects, S2 and interface traps, S4 concentration shown in Figures 1(a) and 1(b) are extracted to better explain the NBTI mechanism under sub-threshold operation regime. The energy band diagrams, which reflect the mechanism under sub-threshold operation regime, are also described to investigate the relationship between energy depths of ∆φs at the interface below Ef with applied stress voltage under sub- and super-threshold regimes, as shown in Figure 2(a). We demonstrated the trap density of state spatial distribution based on a specific location, namely, in the middle of the channel, as shown in Figure 2(b). The distribution of trap density based on location differed significantly. The extended device lifetime of up to 100 years is demonstrated based on expected degradation in terms of ∆Vth in the sub-threshold operation regime in which hole trapping/de-trapping and interface state are taken into account.