Authors: C. Zhang, W. Wang, Y. Liu, Y. Ye, W. Zhao, J. He, W. Wu
Affilation: Peking University Shenzhen SOC Key Laboratory, China
Pages: 518 - 520
Keywords: negative bias temperature instability (NBTI), FinFET, nanoscale, R-T theory
A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory is on the basis of the hypothesis that threshold voltage variation is induced by H atoms captured by either shallow or deep level traps in the gate oxide. The advantage of the novel NBTI model is demonstrated by comparing with the classical Reaction-Diffusion NBTI model. A good match between the proposed NBTI model and the experimental results is obtained in terms of the temperature dependence and the structure effect of nanoscale FinFETs.