Authors: H. Abd Elhamid, B. Ineguez, Y. Ismail, MJ. Deen
Affilation: Zewail City of Science and Technology, Egypt
Pages: 459 - 462
Keywords: DG MOSFET, quantum mechanics, drain current, SPICE
We developed new compact models that include the QM effects on electrical properties such as the surface potential, and drain current. The models were used to study the impact of subband engineering and holes/electrons IMREF on the device electrical parameters such as drain current, surface potential and effective mobility for DG FETs with Si film thickness below 20nm. These models have been verified with published self-consistent results form numerical calculations of the coupled Poission-Schrodinger equations.