Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics

WCM - Compact Modeling Chapter 8

Drain Current Model for Thin Body Undoped and Lightly Doped Double-Gate MOSFETs
H. Abd Elhamid, B. Ineguez, Y. Ismail, MJ. Deen
Zewail City of Science and Technology, EG

Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of two-stage NBTI model
H. Hussin, N. Soin, M.F. Bukhori
Universiti Teknologi MARA, MY

Investigation on Impact of Different Defects based on Different Trap Energy Level in the Framework of Two-Stage NBTI model
H. Hussin, N. Soin, M.F. Bukhori
Universiti Teknologi MARA, MY

Modeling of Short-Channel Effect for Ultra-Thin SOI MOSFET on Ultra-Thin BOX
H. Miyamoto, Y. Fukunaga, H. Zenitani, K. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
Hiroshima University, JP

InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG
S. Khandelwal, J.P. Duarte, N. Paydavosi, Y.S. Chauhan, J.J. Gu, M. Si, P.D. Ye, C. Hu
University of California, Berkeley, US

NQS Modeling of independent DG MOSFET using RTA Approach
N. Sharan, S. Mahapatra
Indian Institute of Science, IN

A Physics Based Potential Model for Cylindrical Surrounding Gate MOSFETs with SiO2- Core Si-Shell Structure
X. Zhang, J. He, M. Chan, C. Du, Y. Ye, W. Zhao, W. Wu, W. Wang
PKU-HKUST ShenZhen-HongKong Institution, CN

Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect
H. Cheng, S. Uno, K. Nakazato
graduate school of engineering, Nagoya University, JP

An Analytic Potential Based Model for Gate-All-Around Nanowire Tunnel-FETs
Y. Liu, J. He, M. Chan
Peking University Shenzhen SOC Key Laboratory, CN

Compact Model Characteristics for Generic MIS-HEMTs
X. Zhou, S.B. Chiah, B. Syamal, H.T. Zhou, A. Ajaykumar, X. Liu
Nanyang Technological University, SG

Analysis of Breakdown Characteristics in Gate and Source Field-Plate AlGaN/GaN HEMTs
H. Onodera, H. Hanawa, K. Horio
Shibaura Institute of Technology, JP

RF-noise modeling in MOSFETs: excess noise, symmetry, and causality
G.D.J. Smit, A.J. Scholten, R.M.T. Pijper, L.F. Tiemeijer, R. van der Toorn, D.B.M. Klaassen, P. Scheer, A. Juge
NXP Semiconductors, NL

Passive Elements Modeling in Microwave/Millimeter-wave application
Y. Wang, J. Yao, J. Luo, Y. Tang
Tsinghua University, CN

Trap-induced apparent linearity of CNTFETs (invited)
M. Haferlach, M. Claus, M. Schröter
TU Dresden, DE

Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation
C. Zhang, W. Wang, Y. Liu, Y. Ye, W. Zhao, J. He, W. Wu
Peking University Shenzhen SOC Key Laboratory, CN

Simulation Study on Dopant Fluctuation Impact on SRG MOSFET Device and Circuit Performane
H. Wang, J. He, Y. Liu
Peking University Shenzhen SOC Key Laboratory, CN

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation
C. Ma, J. He, M. Chan, C. Du, Q. He, Y. Ye, W. Zhao, W. Wu, X. Zhang, W. Wang
PKU-HKUST ShenZhen-HongKong Institution, CN

A Threshold Voltage Modeling for a Spacer Trapping Memory Cell Using Verilog-A
H. Shrimali, V. Liberali
Università degli Studi di Milano, IT

Developing a Common Compact Modeling Platform for Model Developers and Users
L. Zhang, M. Chan
HKUST, HK


ISBN: 978-1-4822-5827-1
Pages: 570
Hardcopy: $209.95