Authors: Z. Liua, J. Zhaoa, W. Xua, L. Qiana, Z. Cuia
Affilation: Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences,, China
Pages: 13 - 16
Keywords: printed thin film transistor, sorted, semiconducting carbon nanotube
Here we report a simple and valid method to fabricate printed top-gate thin-film transistors (TFTs) with based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-2,1-3-thiadiazole)] (PFO-BT) sorted semiconducting carbon nanotubes (SWNTs) from arc discharge carbon nanotubes. Sorted sc-SWCNT inks were directly printed on pre-patterned gold electrode arrays on SiO2/Si substrates by aerosol jet printing. Printed bottom-gate TFTs with mobility up to 35.5 cm2/Vs and on/off ratio up to 106 could be achieved after only printing 2 times (Figure 1). Interestingly, printed top-gate TFTs also showed excellent electrical properties with high on/off ratio and high mobility using chemical vapor deposition of parylene thin films as dielectric layer and printing silver electrodes as top-gated electrodes by aerosol jet printing. In addition, printed inverters based on the printed top-gate TFTs have been constructed, and a maximum voltage gain can reach 0.9 at Vdd of -5 V.