Cabrera W., Dong H., Brennan B., O’Connor É., Carolan P., Galatage R., Monaghan S., Povey I., Hurley P.K., Hinkle C.L., Chabal Y., Wallace R.M.
University of Texas at Dallas, US
Keywords: III-V diffusion high-k
In this study we look at the impact of ALD HfO2 and Al2O3 on both InGaAs and InP substrates, with the aim of determining if there is any diffusion of substrate atoms into the high-k oxide layers during deposition. using in-situ x-ray photoelectron spectroscopy and ex-situ low energy ion scattering, we find evidence for In and As diffusion through HfO2, and discuss the potential impact on electrical device performance.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 1 - 4
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4822-0584-8