Fukunaga Y., Miyake M., Toda A., Kikuchihara K., Baba S., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M.
Hiroshima University, JP
Keywords: chain history effect, charge strage, history effect, SOI-MOSFET
SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect prevents the further improvement of the device switching speed. Here we investigate the history effect under the dynamic operating condition, and develop a compact model applicable for detailed analysis. The special focus is given on modeling the chain history effect.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 788 - 791
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2