Compact Modeling

	Nanotech 2012 Vol. 2 Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2) Chapter 10: Compact Modeling
-	BSIM6: Symmetric Bulk MOSFET Model
	Y.S. Chauhan, M.A. Karim, S. Venugopalan, S. Khandelwal, A. Niknejad, C. Hu
	University of California, Berkeley, US
-	Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model
	C.C. Enz, A. Mangla, M.-A. Chalkiadaki
	Ecole Polytechnique Fédérale de Lausanne (EPFL), CH
-	An analytical 2DEG model considering the two lowest subbands
	J. Zhang, X. Zhou
	NTU singapore, SG
-	Model the AlGaN/GaN High Electron Mobility Transistors
	Y. Wang
	Tsnghua University, CN
-	Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices
	S. Khandelwal, T.A. Fjeldly
	NTNU, NO
-	Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
	T. Iizuka, K. Fukushima, A. Tanaka, M. Ueno, M. Miura-Mattausch
	Hiroshima University, JP
-	Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow
	F. Ueno, A. Tanaka, M. Miyake, T. Iizuka, T. Yamamoto, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch
	Hiroshima University, JP
-	Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles
	T.A. Fjeldly, U. Monga
	Norwegian University of Science and Technology, NO
-	Discreteness and Distribution of Drain Currents in FinFETs
	N. Lu
	IBM, US
-	Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates
	P.K. Thakur, S. Mahapatra
	Indian Institute of Science Bangalore, IN
-	Critical review of CNTFET compact models
	M. Claus, M. Haferlach, D. Gross, M. Schröter
	Technische Universität Dresden, DE
-	Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor
	R. Narang, M. Saxena, R.S. Gupta, M. Gupta
	University of Delhi South Campus, IN
-	Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control
	S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu
	Norwegian University of Science & Technlogy, NO
-	A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs
	X. Zhou, S.B. Chiah
	Nanyang Technological University, SG
-	Modeling of Chain History Effect based on HiSIM-SOI
	Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
	Hiroshima university, JP
-	HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX
	M. Miura-Mattausch, H. Kikuchihara, U. Feldmann, T. Nakagawa, M. Miyake, T. Iizuka, H.J. Mattausch
	Hiroshima University, JP
-	Unified Regional Approach to High Temperature SOI DC/AC Modeling
	S.B. Chiah, X. Zhou, Z. Chen, H.M. Chen
	Nanyang Technological University, SG
-	A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs
	J. Zhang, J. He, Y. Ye, H. He, M. Chan
	Peking University, CN
-	Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect
	A. Zhang, W. Zhao, Y. Ye, J. He, A. Chen, M. Chan
	Beijing University of Aeronautics and Astronautics, CN
-	Leakage current in HfO2 stacks: from physical to compact modeling
	L. Larcher, A. Padovani, P. Pavan
	Università di Modena e Reggio Emilia, IT
-	On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling
	X. Guan, S. Yu, H.-S.P. Wong
	Stanford University, US
-	Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics
	E. Seebacher, A. Steinmair
	austriamicrosystemsAG, AT
-	A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations
	J. Wang, H. Trombley, J. Watts, M. Randall, R. Wachnik
	IBM Semiconductor Research and Development Center, US
-	Understanding and Modeling Quasi-Static Capacitance-Voltage Characteristics of Organic Thin-Film Transistors
	C. Ucurum, H. Goebel
	Helmut Schmidt University - University of the Federal Armed Forces Hamburg, DE
-	Boundary Condition Independence of Cauer RC Ladder Compact Thermal Models
	M. Janicki, T. Torzewicz, Z. Kulesza, A. Napieralski
	Technical University of Lodz, PL
-	i-MOS: A Platform for Compact Modeling Sharing
	H. Wang, M. Chan
	HKUST, HK
ISBN:	978-1-4665-6275-2
Pages:	878
Hardcopy:	$209.95

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