Authors: V.A. Stuchinsky, G.N. Kamaev, M.D. Efremov, S.A. Arzhannikova
Affilation: Institute of Semiconductor Physics, Russian Federation
Pages: 60 - 63
Keywords: Si nanoparticles, MOS capacitor, tunneling
A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.