Authors: A.C. Pearson, B. Singh, M.R. Linford, B.M. Lunt, R.C. Davis
Affilation: Brigham Young University, United States
Pages: 48 - 51
Keywords: data storage, electron beam lithography, Tellurium
We have fabricated nanoscale tellurium fuses using electron beam lithography for long term data storage applications. The tellurium fuses contain a narrow resistive region(250 nm to 10 micron). Application of a sufficiently high voltage accross the tellurium fuse causes resistive heating of the narrow region. After a sufficient temperature is reached, the tellurium melts and begins to flow until a gap is formed in the material. After the gap is formed there is no longer a path for electric current flow, causing a large permanent change in the resistance of the device. We have measured teh resistance change following gap formation and have experimentally determined the effect of voltage on the resulting gap size. Finite element simulations have been used to estimate the effect of applied voltage on the temperature of the fuses.