 | Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 3: Micro & Nano Reliability |
| - | Three-dimensional Deformation Analysis of MEMS/NEMS by means of X-ray Computer-Tomography |
| | J. Hammacher, M. Dost, W. Faust, L. Scheiter, R. Erb, B. Michel |
| | Fraunhofer ENAS, DE |
| - | Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions |
| | N. Ashraf, D. Vasileska |
| | Arizona State University, US |
| - | Reliability Analysis of Low Temperature Low Pressure Ag-Sinter Die Attach |
| | R. Mrossko, H. Oppermann, B. Wunderle, T. Winkler, B. Michel |
| | Berliner Nanotest und Design GmbH, DE |
| - | Fracture mechanical test methods for interface crack evaluation of electronic packages |
| | J. Keller, I. Maus, H. Pape, B. Wunderle, B. Michel |
| | AMIC Angewandte Micro-Messtechnik GmbH, DE |
| - | Automated test system for in-situ testing of reliability and aging behaviour of thermal interface materials |
| | M. Abo Ras |
| | Berliner Nanotest and Design GmbH, DE |
| - | Correlation of Microstructure and Tribological Properties of Dry Sliding Nanocrystalline Diamond Coatings |
| | M. Wiora, N. Sadrifar, K. Brühne, P. Gluche, H.-J. Fecht |
| | Ulm University, DE |
| - | FinFET reliability issue analysis by forward gated-diode method |
| | Z. Liu |
| | PKU HKUST Shenzhen Institution of IER., CN |
| - | Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance |
| | X. Zhang |
| | Peking University, CN |
| - | Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity |
| | J. Xu |
| | Peking University, CN |
| - | An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current |
| | C. Zhang |
| | Peking University, CN |
| - | Cryostructuration of latexes |
| | I. Portnaya |
| | Technion - Israel Institute of Technology, IL |
| ISBN: | 978-1-4398-7139-3 |
| Pages: | 854 |
| Hardcopy: | $199.95 |
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| Order: | Mail/Fax Form |
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