Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Chapter 3:

Micro & Nano Reliability

-Three-dimensional Deformation Analysis of MEMS/NEMS by means of X-ray Computer-Tomography
 J. Hammacher, M. Dost, W. Faust, L. Scheiter, R. Erb, B. Michel
 Fraunhofer ENAS, DE
-Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions
 N. Ashraf, D. Vasileska
 Arizona State University, US
-Reliability Analysis of Low Temperature Low Pressure Ag-Sinter Die Attach
 R. Mrossko, H. Oppermann, B. Wunderle, T. Winkler, B. Michel
 Berliner Nanotest und Design GmbH, DE
-Fracture mechanical test methods for interface crack evaluation of electronic packages
 J. Keller, I. Maus, H. Pape, B. Wunderle, B. Michel
 AMIC Angewandte Micro-Messtechnik GmbH, DE
-Automated test system for in-situ testing of reliability and aging behaviour of thermal interface materials
 M. Abo Ras
 Berliner Nanotest and Design GmbH, DE
-Correlation of Microstructure and Tribological Properties of Dry Sliding Nanocrystalline Diamond Coatings
 M. Wiora, N. Sadrifar, K. Brühne, P. Gluche, H.-J. Fecht
 Ulm University, DE
-FinFET reliability issue analysis by forward gated-diode method
 Z. Liu
 PKU HKUST Shenzhen Institution of IER., CN
-Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance
 X. Zhang
 Peking University, CN
-Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
 J. Xu
 Peking University, CN
-An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current
 C. Zhang
 Peking University, CN
-Cryostructuration of latexes
 I. Portnaya
 Technion - Israel Institute of Technology, IL
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