Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

Abebe H., Cumberbatch E.
USC/ISI, US

Keywords: circuit simulation, compact device modeling, MOSFET, SPICE

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with numerical results. The compact models are developed based on the graphene material physics using 1-D approximation for circuit simulation application.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 800 - 802
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4398-7139-3