Authors: Y. Shintaku
Affilation: Hiroshima University, Japan
Pages: 772 - 775
Keywords: double gate MOSFETs, HiSIM-DG, compact model
The variability of the DG-MOSFET is expected to cause serious problems for real circuit applications. Thus purpose of our investigation is to provide an accurate extraction of device variations, and to predict influence of the variation on circuit performances. For the purpose, we have developed the compact model HiSIM-DG for circuit simulation based on the device physics, namely based on the complete surface-potential description in a similar way as numerical 2D-device simulators. With use of HiSIM-DG, we have extracted the device parameter variations for measured I-V statistics. It has been observed that the variation of the oxide thickness causes the similar variation of the on-current Ion as the conventional bulk-MOSFET as well as SOI-MOSFET. On the contrary, the threshold voltage variation is strongly suppressed for the DG-MOSFET, which is different from other MOSFET types. The reason is mainly due to the volume-inversion effect induced by the double-gate carrier control. This specific feature of DG-MOSFET, namely the device parameter variation is insensitive to the threshold Vth is confirmed by numerical 2D-device simulations.