Nano Science and Technology Institute
Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Chapter 10:

Compact Modeling

-Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type
 M. Miura-Mattausch, M. Miyake, H. Kikuchihara, U. Feldmann, S. Amakawa, H.J. Mattausch
 Hiroshima University, JP
-MOSFET threshold voltage: definition, extraction, and applications
 M.B. Machado, O. Siebel, M.C. Schneider, C. Galup-Montoro
 Federal University of Santa Catarina, BR
-UF “Compact” Models: A Historical Perspective
 J.G. Fossum
 University of Florida, US
-Compact Models for sub-22nm MOSFETs
 Y.S. Chauhan, D. Lu, S. Venugopalan, T. Morshed, M.A. Karim, A. Niknejad, C. Hu
 University of California Berkeley, US
-Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs
 X. Zhou
 Nanyang Technological University, SG
-Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs
 T.A. Fjeldly, U. Monga
 Norwegian University of Technology, NO
-A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics
 L. Wei, D.J. Frank, L. Chang, H.-S.P. Wong
 Massachusetts Institute of Technology, US
-High-Voltage MOSFET Compact Modeling
 E. Seebacher
 austriamicrosystems AG, AT
-Modeling of High Voltage Devices for ESD Event Simulation
 Y. Zhou, J. Salcedo, J.-J. Hajjar
 Analog Devices, Inc., US
-Process Variability Modeling for VLSI Circuit Simulation
 S.K. Saha
 SuVolta, Inc., US
-A Phase-Change Random Access Memory Model for Circuit Simulation
 M. Chan
 HKUST, HK
-Modeling Strategies for Flash Memory Devices
 A. Padovani, L. Larcher, P. Pavan
 Università di Modena e Reggio Emilia, IT
-Comparison and insight into long-channel MOSFET drain current models
 L. Zhang
 Peking University, CN
-HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics
 Y. Shintaku
 Hiroshima University, JP
-Analytic potential model for asymmetricunderlap gate-all-around MOSFET
 S. Wang
 Peking University, CN
-Modeling of the impurity-gradient effect in high-voltage MOSFETs
 Y. Maekawa, K. Fukushima, A. Tanaka, H. Kikuchihara, M. Miyake, H.J. Mattausch, M. Miura-Mattausch
 Hiroshima University, JP
-Charge Partition in Lateral Nonuniformly-Doped Transistor
 J. Zhang, X. Zhou, G. Zhu and S. Lin
 Nanyang Technological University, SG
-Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors
 C-H Shen
 National Chiao Tung University, TW
-Characterization and Modeling of Metal Finger Capacitors
 N. Lu, R. Booth, D. Daley, E. Thompson, C. Putnam
 IBM, US
-The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes
 M. Zubert, L. Starzak, G. Jablonski, M. Napieralska, M. Janicki, A. Napieralski
 Technical University of Lodz, PL
-Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
 H. Abebe, E. Cumberbatch
 USC/ISI, US
-Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs
 U. Monga, T.A. Fjeldly
 Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO
-Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region
 L. Shihuan
 Nanyang Technology University, SG
-The Application of RESCUER Software to Modelling of Coupled Problems in Modern Devices
 M. Zubert, A. Napieralski
 Technical University of Lodz, PL
-Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs
 M.A. Karim, S. Venugopalan, Y.S. Chauhan, D. Lu, A. Niknejad, C. Hu
 University of California at Berkeley, US
ISBN:978-1-4398-7139-3
Pages:854
Hardcopy:$199.95
 
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