 | Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 10: Compact Modeling |
| - | Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type |
| | M. Miura-Mattausch, M. Miyake, H. Kikuchihara, U. Feldmann, S. Amakawa, H.J. Mattausch |
| | Hiroshima University, JP |
| - | MOSFET threshold voltage: definition, extraction, and applications |
| | M.B. Machado, O. Siebel, M.C. Schneider, C. Galup-Montoro |
| | Federal University of Santa Catarina, BR |
| - | UF “Compact” Models: A Historical Perspective |
| | J.G. Fossum |
| | University of Florida, US |
| - | Compact Models for sub-22nm MOSFETs |
| | Y.S. Chauhan, D. Lu, S. Venugopalan, T. Morshed, M.A. Karim, A. Niknejad, C. Hu |
| | University of California Berkeley, US |
| - | Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs |
| | X. Zhou |
| | Nanyang Technological University, SG |
| - | Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs |
| | T.A. Fjeldly, U. Monga |
| | Norwegian University of Technology, NO |
| - | A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics |
| | L. Wei, D.J. Frank, L. Chang, H.-S.P. Wong |
| | Massachusetts Institute of Technology, US |
| - | High-Voltage MOSFET Compact Modeling |
| | E. Seebacher |
| | austriamicrosystems AG, AT |
| - | Modeling of High Voltage Devices for ESD Event Simulation |
| | Y. Zhou, J. Salcedo, J.-J. Hajjar |
| | Analog Devices, Inc., US |
| - | Process Variability Modeling for VLSI Circuit Simulation |
| | S.K. Saha |
| | SuVolta, Inc., US |
| - | A Phase-Change Random Access Memory Model for Circuit Simulation |
| | M. Chan |
| | HKUST, HK |
| - | Modeling Strategies for Flash Memory Devices |
| | A. Padovani, L. Larcher, P. Pavan |
| | Università di Modena e Reggio Emilia, IT |
| - | Comparison and insight into long-channel MOSFET drain current models |
| | L. Zhang |
| | Peking University, CN |
| - | HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics |
| | Y. Shintaku |
| | Hiroshima University, JP |
| - | Analytic potential model for asymmetricunderlap gate-all-around MOSFET |
| | S. Wang |
| | Peking University, CN |
| - | Modeling of the impurity-gradient effect in high-voltage MOSFETs |
| | Y. Maekawa, K. Fukushima, A. Tanaka, H. Kikuchihara, M. Miyake, H.J. Mattausch, M. Miura-Mattausch |
| | Hiroshima University, JP |
| - | Charge Partition in Lateral Nonuniformly-Doped Transistor |
| | J. Zhang, X. Zhou, G. Zhu and S. Lin |
| | Nanyang Technological University, SG |
| - | Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors |
| | C-H Shen |
| | National Chiao Tung University, TW |
| - | Characterization and Modeling of Metal Finger Capacitors |
| | N. Lu, R. Booth, D. Daley, E. Thompson, C. Putnam |
| | IBM, US |
| - | The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes |
| | M. Zubert, L. Starzak, G. Jablonski, M. Napieralska, M. Janicki, A. Napieralski |
| | Technical University of Lodz, PL |
| - | Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling |
| | H. Abebe, E. Cumberbatch |
| | USC/ISI, US |
| - | Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs |
| | U. Monga, T.A. Fjeldly |
| | Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO |
| - | Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region |
| | L. Shihuan |
| | Nanyang Technology University, SG |
| - | The Application of RESCUER Software to Modelling of Coupled Problems in Modern Devices |
| | M. Zubert, A. Napieralski |
| | Technical University of Lodz, PL |
| - | Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs |
| | M.A. Karim, S. Venugopalan, Y.S. Chauhan, D. Lu, A. Niknejad, C. Hu |
| | University of California at Berkeley, US |
| ISBN: | 978-1-4398-7139-3 |
| Pages: | 854 |
| Hardcopy: | $199.95 |
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| Order: | Mail/Fax Form |
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