Cheng H-W, Chiu Y-Y, Lee Y-H, Li Y.
National Chiao Tung University, TW
Keywords: 3D device quantum transport simulation, bulk FinFET, grain number, high-k/metal gate, position effect, work function fluctuation
High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. In this study, based on experimentally calibrated 3D device simulation [7], WK fluctuation (WKF) of 16 nm TiN/HfO2 gate stack bulk FinFET devices is investigated. The effect of individual WKF in nanosized grain of metal gate on device’s characteristic are captured using localized WKF simulation technique [1], where the random position and number of nanosized metal grains are for the first time modeled and examined. Physical findings on WKF of HKMG devices are discussed accordingly
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 30 - 33
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4398-7139-3