Authors: D. Xia, L. He
Affilation: San Jose State University, United States
Pages: 84 - 87
Keywords: memristor, switching mechanism, frequency response
In this work, we first investigated the switching mechanisms and the resistive switching behavior that take place in the memristor. Both the bipolar and unipolar switching behaviors are studied. The ionic transportation mechanism is used to explain the resistive switching process. In addition, a working model for the memristor that based on the existing oxygen vacancies mitigation mechanism is proposed. Our model was based on early presented model by Strukov et al. which was further developed by Joglekar and Wolf. It gives a detailed technical explanation of the memristor which compliments existing models. A VerilogA model of simulation for the memristor is conducted. The window function based on earlier work was further modified in order to describe the nonlinear drift effect of the memristor. The results are shown in figures attached. With this model, we were able to investigate various properties of the memristor in Cadence, such as the I-V characteristic of a single memristor, the frequency response of the memristor, and the zero-input response of a memristor-capacitor (MC) system.