Authors: S. Darbari, M. Shahmohammadi, S. Mohajerzadeh, M.D. Robertson
Affilation: Thin Film and Nanoelectronics Laboratories, Iran, Islamic Republic of
Pages: 803 - 806
Keywords: light emitting diode, electroluminescence, Si-nano-crystal
Si-nano-crystal (Si-nc) layers with luminescent behavior on glass substrate have been prepared using a time multiplexed plasma hydrogenation and reactive ion etching at temperatures below 450oC. Various techniques such as SEM, Photo-luminescent and TEM analyses were used to investigate the multilayered structures and their luminescent behavior. This approach has been utilized to realize multilayered light emitting diodes on glass substrates and electro-luminescent examination has been used to further study the fabricated diode structures. RF-plasma enhanced CVD was applied to deposit an amorphous-Si layer on a glass substrate while an in-situ hydrogenation step has been applied to realize nano-scale crystal grains embedded in the amorphous medium.