Authors: B. Cousin, M. Reyboz, O. Rozeau, M.-A. Jaud, T. Ernst, J. Jomaah
Affilation: CEA, LETI, MINATEC, France
Pages: 793 - 796
Keywords: device modeling, gate-all-around (GAA) MOSFET, short-channel effects (SCE)
A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface potential approach. Results regarding I-V characteristics, for short-channel transistors, are compared to numerical simulations and validate our method in all operating regions.