 | Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Chapter 11: Compact Modeling |
| - | Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels |
| | B.B. Jie, C-T. Sah |
| | Univesity of Florida, US |
| - | Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs |
| | Z. Zhou, J. Zhang, X. Zhou, X. Lin, J. He |
| | Peking University, CN |
| - | Impact of Gate-Induced-Drain-Leakage current modeling on circuit simulations in 45nm SOI technology and beyond |
| | H. Wang, R. Williams, L. Wagner, J. Johnson, P. Hyde, S. Springer |
| | IBM, US |
| - | Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS |
| | Y. Deng, R.A. Rupani, J. Johnson, S. Springer |
| | IBM, US |
| - | A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel |
| | J. Zhang, J. He, L. Zhang, X. Zhou, Z. Zhou |
| | Peking University, CN |
| - | Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET |
| | U. Monga, T.A. Fjeldly |
| | UniK/Norwegian University of Science and Technology, NO |
| - | Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices |
| | H. Abebe, E. Cumberbatch, S. Uno, V. Tyree |
| | USC/ISI, US |
| - | Analytic Channel Potential Solution of Symmetric DG AMOSFETs |
| | L. Chen, Y. Xu, L. Zhang, X. Zhou, W. Zhou, J. He |
| | Peking University, CN |
| - | Source/Drain Edge Modeling for DG MOSFET Compact Model |
| | T. Nakagawa, S. O’uchi, T. Sekigawa, T. Tsutsumi, M. Hioki, H. Koike |
| | AIST (National Institute of Advanced Industrial Science and Technology), JP |
| - | Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model |
| | X. Zhou, G.J. Zhu, M.K. Srikanth, S.H. Lin, Z.H. Chen, J.B. Zhang, C.Q. Wei, Y.F. Yan, R. Selvakumar |
| | Nanyang Technological University, SG |
| - | Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs |
| | S.K. Vishvakarma, T.A. Fjeldly |
| | Norwegian University of Science and Technology, NO |
| - | A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs |
| | B. Cousin, M. Reyboz, O. Rozeau, M.-A. Jaud, T. Ernst, J. Jomaah |
| | CEA, LETI, MINATEC, FR |
| - | Analytical Solution of Surface Potential for Un-Doped Surrounding-Gate MOSFET |
| | A. Dey, A. DasGupta |
| | Arizona State University, US |
| - | Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects |
| | J. Dura, S. Martinie, D. Munteanu, M.-A. Jaud, S. Barraud, J.L. Autran |
| | CEA-LETI Minatec, FR |
| - | Bias Dependence of Low Frequency Noise in 90nm CMOS |
| | N. Mavredakis, A. Antonopoulos, M. Bucher |
| | Technical University of Crete, GR |
| - | Compact Modeling of Signal Transients for Dispersionless Interconnects With Resistive, Capacitive and Inductive Terminal Loads |
| | Chi Liu, Z. Zhou, X. Lin, J. Xia, X. Zhang, J. He |
| | Peking University, CN |
| - | Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application |
| | W. Feldman, E. Cumberbatch, H. Abebe |
| | USC/ISI, US |
| - | Modeling of Mismatch and Across-Chip Variations in Compact Device Models |
| | N. Lu |
| | IBM, US |
| - | Guidelines for Verilog-A Compact Model Coding |
| | G. Depeyrot, F. Poullet |
| | Dolphin Integration, FR |
| ISBN: | 978-1-4398-3402-2 |
| Pages: | 862 |
| Hardcopy: | $189.95 |
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