Authors: M-H Han, Y. Li
Affilation: National Chiao Tung University, Taiwan
Pages: 21 - 24
Keywords: intrinsic parameter fluctuation, nanoscale MOSFET, emerging device technology, modeling, simulation
In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) are comprehensively studied. The results of this study show that RDF dominates the NMOS device characteristics, and WKF is major factor in PMOS. PVE affect the CMOS device AC characteristics, especially at high gate bias.