Authors: B. Singh, P. Gupta, S. Chaudhary, D.K. Pandya, S.C. Kashyap
Affilation: Inidan Institute of Technology Delhi, India
Pages: 57 - 60
Keywords: memory, tunnel magnetoresistance, thin films, sputtering
The experimental observation of Tunnel Magnetoresistance (TMR) in 1996 by Moodera’s group of MIT has triggered intensive efforts worldwide to fabricate and investigate the magnetoresistive junctions showing a TMR effect. While in past 3-4 years, the predictions of over 1000% TMR is closely being approached, there however remain a number of process related issues that are yet to be resolved before such junctions would eventually be commercialized in developing MRAMs. The Fe/MgO/Fe system is an interesting system in which 300% TMR is reported. However, almost all the reports are based on MBE process, which is not commercially viable. In this work, we attempted to explore the possibility of fabricating and studying such junctions by in-situ ion beam ion assisted sputter deposition, a mode of sputtering in which the growth pressures are about two orders lower than the conventional RF/DC sputtering technique.