Authors: S. Lin, X. Zhou, G.H. See, G. Zhu, C. Wei, J. Zhang, Z. Chen
Affilation: Nanyang Technological University, Singapore
Pages: 643 - 646
Keywords: nanowire, capacitance, compact model
Gate-All-Around (GAA), or surrounding-gate, MOSFET is one of the most promising structures beyond bulk CMOS. In this paper, we present a simple, accurate C-V model of undoped silicon nanowire MOSFETs. Different with other models, proposed C-V model is based on our surface-potential-based I-V model. Proposed model is suitable for circuit simulation and is extended into short channel device. The model is valid in all operation regimes involve linear, saturation, volume inversion, strong inversion and the “accumulation” regimes. The comparison between numerical simulator with model shows good agreement validates the proposed model.