Tsai J.T.H., Liao Z.-J.
Tatung University, TW
Keywords: gallium nitride, high intensity discharge lamp, nanowire
We produce an mercury-free, high efficiency HID lamp with the GaN nanostructure enhancer embedded. These dense GaN nanowires embedded into the HID electrodes can reduce 25% of ignition voltage and enhance the 17% of efficiency from our illumination system. Gallium ions will released from GaN nanowires when arc discharge ignition. These results represent a route to use nanomaterials with a conventional product to develop high efficiency lighting system.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 648 - 651
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4398-1782-7