Authors: D. Munteanu, M. Moreau, J.L. Autran
Affilation: L2MP-CNRS, France
Pages: 877 - 880
Keywords: independent double-gate transistor, ballistic, quantum confinement, tunneling
Double-Gate structures with independent gates have been recently proposed, allowing a four terminal operation. Independent Double-Gate (IDG) MOSFETs offer additional potentialities, such as a dynamic threshold voltage control by one of the two gates, transconductance modulation, signal mixer, in addition to the conventional switching operation. Thus, IDG MOSFETs are promising for future high performance and low power consumption very large scale integrated circuits. However, one of the identified challenges for IDG MOSFET optimization remains the development of compact models taking into account the main physical phenomena governing the devices at this scale of integration. In this work, an analytical subthreshold model of ultra-thin IDG MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate devices: short-channel effects, quantum confinement, thermionic current and tunneling of carriers through the source-to-drain barrier. Important device parameters, such as the Ioff-current or the subthreshold swing, can be easily evaluated though this full analytical approach which also provides a complete set of equations for developing equivalent-circuit model used in ICs simulation.