Authors: S. Martinie
Affilation: CEA LETI-MINATEC, France
Pages: 837 - 840
Keywords: double-gate MOSFET, ballistic/quasi-ballistic transport, compact model, ring oscillator
As the MOSFET continues to shrink rapidly, emerging physical phenomena, such as ballistic transport, have to be considered in the modelling and simulation of ultra-scaled devices. Future Double-Gate MOSFETs, designed with channel lengths in the decananometer scale, are expected to be more ballistic or quasi-ballistic than diffusive. At this level of miniaturisation is essential to directly evaluate the impact of ballistic and quasi-ballistic transport at circuit level through simulation of several circuit demonstrators. In this work we demonstrate the feasibility of a simulation study of ballistic/quasi-ballistic transport at circuit level and we show the impact this advanced transport on the commutation of CMOS inverter and the oscillation frequency of ring oscillator.