Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Chapter 7:

Compact Modeling

-Capacitance modeling of Short-Channel DG and GAA MOSFETs
 H. Børli, S. Kolberg, T.A. Fjeldly
 Norwegian University of Science and Technology, NO
-New Properties and New Challenges in MOS Compact Modeling
 X. Zhou, G.H. See, G. Zhu, Z. Zhu, S. Lin, C. Wei, A. Srinivas, J. Zhang
 Nanyang Technological University, SG
-Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum-Mechanical Effects
 G.H. See, X. Zhou, G. Zhu, Z. Zhu, S. Lin, C. Wei, J. Zhang, A. Srinivas
 Nanyang Technological University, SG
-Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs
 G. Zhu, G.H. See, X. Zhou, Z. Zhu, S. Lin, C. Wei, J. Zhang, A. Srinivas
 Nanyang Technological University, SG
-Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation
 M. Miura-Mattausch, M. Chan, J. He, H. Koike, H.J. Mattausch, T. Nakagawa, Y.J. Park, T. Tsutsumi, Z. Yu
 Hiroshima University, JP
-Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping
 G.H. See, X. Zhou, G. Zhu, Z. Zhu, S. Lin, C. Wei, J. Zhang, A. Srinivas
 Nanyang Technological University, SG
-Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution
 J. He, Y. Chen, B. Li, Y. Wei, M. Chan
 PEKING University, CN
-Modeling of Floating-Body Devices Based on Complete Potential Description
 N. Sadachika, T. Murakami, M. Ando, K. Ishimura, K. Ohyama, M. Miyake, H.J. Mattausch, M. Miura-Mattausch
 Hiroshima-University, JP
-The Driftless Electromigration Theory (Diffusion-Generation-Recombination-Trapping)
 C-T Sah, B.B. Jie
 University of Florida, US
-Adaptable Simulator-independent HiSIM2.4 Extractor
 T. Gneiting, T. Eguchi, W. Grabinski
 AdMOS GmbH Advanced Modeling Solutions, DE
-Recent Advancements on ADMS Development
 B. Gu, L. Lemaitre
 Freescale Semiconductor, US
-Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation
 Y. Zhou, J.-J. Hajjar
 Analog Devices, Inc., US
-Improved layout dependent modeling of the base resistance in advanced HBTs
 S. Lehmann, M. Schroter
 University of Technology Dresden, DE
-The Bipolar Field-Effect Transistor Theory (A. Summary of Recent Progresses)
 B.B. Jie, C-T Sah
 Peking University, CN
-The Bipolar Field-Effect Transistor Theory (B. Latest Advances)
 C-T Sah, B.B. Jie
 University of Florida, US
-An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC Spice Simulation
 B. Tudor, J.W. Wang, B.P. Hu, W. Liu, F. Lee
 Synopsys, Inc., US
-Compact Modeling of Noise in non-uniform channel MOSFET
 A.S. Roy, C.C. Enz, T.C. Lim and F. Danneville
 CSEM & EPFL, CH
-An Iterative Approach to Characterize Various Advanced Non-Uniformly Doped Channel Profiles
 R. Kaur, R. Chaujar, M. Saxena, R.S. Gupta
 University of Delhi, IN
-Modeling of Spatial Correlations in Process, Device, and Circuit Variations
 N. Lu
 IBM, US
-Model Implementation for Accurate Variation Estimation of Analog Parameters in Advanced SOI Technologies
 S. Suryagandh, N. Subba, V. Wason, P. Chiney, Z-Y Wu, B.Q. Chen, S. Krishnan, M. Rathor, A. Icel
 Advanced Micro Devices, US
-Modeling of gain in advanced CMOS technologies
 A. Spessot, F. Gattel, P. Fantini, A. Marmiroli
 STMicroelectronics, IT
-Effective Drive Current in CMOS Inverters for Sub-45nm Technologies
 J. Hu, J.E. Park, G. Freeman, H.S.P. Wong
 Stanford University, US
-Process Aware Compact Model Parameter Extraction for 45 nm Process
 A.P. Karmarkar, V.K. Dasarapu, A.R. Saha, G. Braun, S. Krishnamurthy, X.-W. Lin
 Synopsys (India) Pvt. Ltd., IN
-Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/quasi-ballistic Effects
 S. Martinie
 CEA LETI-MINATEC, FR
-An Improved Impact Ionization Model for SOI Circuit Simulation
 X. Xi, F. Li, B. Tudor, W. Wang, W. Liu, F. Lee, P. Wang, N. Subba, J-S Goo
 Synopsys Inc, US
-Parameter Extraction for Advanced MOSFET Model using Particle Swarm Optimization
 R.A. Thakker, M.B. Patil, K.G. Anil
 Indian Institute of Technology, IN
-Compact Models for Double Gate MOSFET with Quantum Mechanical Effects using Lambert Function
 H. Abebe, H. Morris, E. Cumberbatch, V. Tyree
 University of Southern California, ISI, US
-Neural Computational Approach for FinFET Modeling and Nano-Circuit Simulation
 M.S. Alam, A. Kranti, G.A. Armstrong
 Z. H. College of Engineering & Technology, IN
-Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping
 V. Hariharan, R. Thakker, M.B. Patil, J. Vasi, V.R. Rao
 IIT Bombay, IN
-Comparison of Four-terminal DG MOSFET Compact Model with Thin Si channel FinFET Devices
 T. Nakagawa, T. Sekigawa, T. Tsutsumi, Y. Liu, M. Hioki, S. O’uchi, H. Koike
 Electroinformatics Group, JP
-MOSFET Compact Modeling Issues for Low Temperature (77 K - 200 K) Operation
 P. Martin, M. Cavelier, R. Fascio, G. Ghibaudo
 CEA-LETI Minatec, FR
-Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS transistors
 Z. Chen, B.B. Jie, C-T Sah
 Nanyang Technological University, SG
-Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET
 R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta
 University of Delhi, IN
-Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs
 D. Munteanu, M. Moreau, J.L. Autran
 L2MP-CNRS, FR
-Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET
 M. Reyboz, P. Martin, O. Rozeau, T. Poiroux
 cea-leti, FR
-A Technique for Constructing RTS Noise Model Based on Statistical Analysis
 C-Q Wei, Y-Z Xiong, X. Zhou
 Nanyang Technological University, SG
-Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs
 H. Kaur, S. Kabra, S. Haldar, R.S. Gupta
 University of Delhi, IN
-HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications
 Y. Oritsuki, M. Yokomiti, T. Sakuda, N. Sadachika, M. Miyake, T. Kajiwara, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
 Hiroshima-University, JP
-Si-Based Process Aware SPICE Models for Statistical Circuit Analysis
 S. Krishnamurthy, V.K. Dasarapu, Y. Mahotin, R. Ryles, F. Roger, S. Uppal, P. Mukherjee, A. Cuthbertson, X-W Lin
 Synopsys Inc., US
ISBN:978-1-4200-8505-1
Pages:940
Hardcopy:$159.95
 
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