Authors: R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta
Affilation: Semiconductor Devices Research Laboratory, India
Pages: 586 - 589
Keywords: ATLAS, concave, DMG, intrinsic delay, RF, stability
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower intrinsic delay pertained by L-DUMGAC architecture strengthens the idea of using it for switching applications, thereby giving a new opening for high frequency wireless communications. Thus, L-DUMGAC MOSFET design acts as an attractive solution for the ongoing integration process for LNA design and RF applications below the 65-nm technology node.