Authors: M. Miyake, N. Sadachika, K. Matsumoto, D. Navarro, T. Ezaki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi and S. Miyamoto
Affilation: Hiroshima University, Japan
Pages: 621 - 624
Keywords: MOS-Varactor, RF-applications, carrier transit delay, capacitance, accumulation mode
For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority carrier transit time, causing a formation delay of the accumulation/depletion condition. Good agreement with 2D device simulation result is verified up to 200GHz operation. The calculated quality factor is proved to deviate from linearity as a function of operation frequency due to the majority carrier transit delay.