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 | Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types | | Authors: | J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik | | Affilation: | IBM, US | | Pages: | 562 - 565 | | Keywords: | MOSFET, compact models, correlation | | Abstract: | MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices. | | ISBN: | 1-4200-6184-4 |
| Pages: | 732 |
| Hardcopy: | $199.99 |
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